Title :
Shallow n+/p Junction Formation using PH3 Plasma Doping Technique
Author :
Kim, Jeong Eun ; Jung, Ho ; Do, Seung Woo ; Oh, Jae Geun ; Hwang, Sun Hwan ; Lee, Jin Ku ; Ku, Ja Choon ; Lee, Jong-Ho ; Lee, Yong Hyun ; Kong, Seong Ho
Abstract :
This paper discusses the formation of n-type shallow junctions using PH3 plasma doping technique. Shallow n+/p junctions are examined by secondary ion mass spectrometer (SIMS), transmission electron microscopy (TEM), double crystal X-ray diffraction (DXRD) and 4-point probe analysis methods. Measured doping profiles reveal that the junction depth less than 300 Aring and minimum sheet resistance of 104.1 Omega/I are feasible.
Keywords :
X-ray diffraction; doping profiles; p-n junctions; plasma materials processing; secondary ion mass spectra; semiconductor doping; transmission electron microscopy; 4-point probe analysis; PH3 plasma doping; doping profiles; double crystal X-ray diffraction; n-type shallow junctions; n+-p junction; secondary ion mass spectrometer; sheet resistance; transmission electron microscopy; Annealing; Crystallization; Doping profiles; Plasma immersion ion implantation; Plasma measurements; Plasma sources; Plasma temperature; Plasma x-ray sources; Semiconductor device doping; Voltage;
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
DOI :
10.1109/IMNC.2007.4456166
