DocumentCode
3048875
Title
Nanopatterning of Si wafer surface using microphase-separated structure of block copolymer as wet etching mask
Author
Watanabe, R. ; Kamata, K. ; Iyoda, T.
Author_Institution
Tokyo Inst. of Technol., Yokohama
fYear
2007
fDate
5-8 Nov. 2007
Firstpage
188
Lastpage
189
Abstract
This report presents a new lithographic process utilizing the microphase-separated structures as an etching mask for wet chemical etching of Si wafer. The process demonstrated in this study could open easy tuning of pattern size by changing molecular weight of block copolymers and large area nanopattern transcription with high throughput.
Keywords
elemental semiconductors; etching; masks; nanolithography; nanopatterning; polymer blends; silicon; Si; Si wafer surface; block copolymer; lithographic process; microphase-separated structure; nanopattern transcription; nanopatterning; pattern size tuning; wet chemical etching; wet etching mask; Annealing; Chemical processes; Chemical technology; Crystallization; Image analysis; Nanopatterning; Polymer films; Semiconductor films; Silicon; Wet etching;
fLanguage
English
Publisher
ieee
Conference_Titel
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location
Kyoto
Print_ISBN
978-4-9902472-4-9
Type
conf
DOI
10.1109/IMNC.2007.4456167
Filename
4456167
Link To Document