Title :
Structural and sensing characteristics of Pr2O3 sensing membrane for pH-ISFET
Author :
Pan, Tung-Ming ; Liao, Kao-Ming ; Cheng, Chih-Hung ; Lin, Jian-Chyi
Author_Institution :
Chang Gung Univ., Kwei-Shan
Abstract :
In this paper, the physical and sensing properties of physical vapor deposition Pr2O3 dielectrics deposited on Si substrate were explored. A 30 nm Pr2O3 dielectric was grown on the p-type Si (100) wafer by reactive RF sputtering from a praseodymium target with a argon-to-oxygen (Ar/O2) flow ratio of 10/4. Post deposition annealing of the samples was carried out using a conventional rapid thermal annealing (RTA) system in O2 ambient for 30-s at different temperatures. A 300-nm Al was deposited on the backside of Si wafer by thermal evaporator. The sensing area was defined by a photosensitive epoxy. The pH sensitivities of Pr2O3 sensing films were all extracted by capacitance-voltage (C-V) curves of EIS structures. C-V curves for various pH buffer solutions of Merck Inc. were measured through Ag/AgCl reference electrode by Hewlet-Packard 4284A.
Keywords :
X-ray diffraction; chemical sensors; dielectric thin films; ion sensitive field effect transistors; pH measurement; praseodymium compounds; rapid thermal annealing; silicon; sputter deposition; surface roughness; Pr2O3; Si; XRD spectra; dielectric film; pH- ion sensitive field effect transistors; postdeposition annealing; rapid thermal annealing; reactive RF sputtering; sensing membrane; size 30 nm; surface roughness; temperature 800 C to 900 C; thermal evaporator; Annealing; Biomembranes; Capacitance-voltage characteristics; Dielectric substrates; High K dielectric materials; High-K gate dielectrics; Hysteresis; Silicon; Temperature measurement; Temperature sensors;
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
DOI :
10.1109/IMNC.2007.4456172
