Title :
Surface properties for hydrogen, carbon, and oxygen adsorption on the Ga-terminated (0001) GaN surface system with nitrogen vacancy
Author :
Lee, Sung-Ho ; Chung, Yong-Chae
Author_Institution :
Hanyang Univ., Seoul
Abstract :
In this study, the surface formation energy and electronic structure for the gas atom (H-, C-, or O-adatom) adsorbed on the Ga-terminated (0001 macr) surface in a condition of nitrogen vacancy were extensively investigated using ab initio calculations.
Keywords :
III-V semiconductors; ab initio calculations; adsorption; carbon; gallium compounds; hydrogen; oxygen; surface energy; surface states; vacancies (crystal); wide band gap semiconductors; C; Ga-terminated (0001 macr) GaN surface; GaN; H; O; adsorption; electronic structure; surface formation energy; vacancy; Crystalline materials; Gallium nitride; Hydrogen; Materials science and technology; Nitrogen; Optoelectronic devices; Power engineering and energy; Slabs; Surface cleaning; Surface waves;
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
DOI :
10.1109/IMNC.2007.4456175
