Effect of C60 concentrations on the flat-band voltage shift of nonvolatile memory devices with a hybrid poly-4-vinyl-phenol and C60 active layer

Organic memory devices with a hybrid active layer consisting of the poly-4-vinyl-phenol (PVP) and C₆₀ were formed by using the spin-coating technique. The C-V curves for Al/hybrid PVP and C₆₀ composites on p-type Si(100)/Al structure at room temperature showed a metal-insulator-semiconductor (MIS) behavior with a large flat-band voltage shift due to the existence of the C₆₀ molecules. The magnitude of the flat-band voltage for the memory devices with a hybrid active layer consisting of the PVP and C₆₀ increased with increasing C₆₀ concentration. These results indicate that organic memory device based on the PVP and C₆₀ hybrid active layer hold promise for potential applications in next-generation nonvolatile flash memory devices.