DocumentCode :
3049262
Title :
Study of electronic parameters of mesoporous silicon under adsorption of viruses of plants
Author :
Vashpanov, Yu. ; Son, Jung-Young
Author_Institution :
Hanyang Univ., Seoul
fYear :
2007
fDate :
5-8 Nov. 2007
Firstpage :
238
Lastpage :
239
Abstract :
The mechanism of influence of adsorption of viruses of plants on voltage-ampere characteristic is connected with redistribution of a voltage on barrier structures and depends on type of viruses. Measurement of electronic characteristics of porous silicon can be used for creation of detectors for presence of viruses in an environment.
Keywords :
adsorption; botany; elemental semiconductors; mesoporous materials; microorganisms; porous semiconductors; silicon; Si; adsorption; electronic parameters; mesoporous silicon; plants; viruses; voltage redistribution; voltage-ampere characteristic; Chemicals; Computer viruses; Extraterrestrial measurements; Gases; Mesoporous materials; Semiconductor materials; Silicon; Surface morphology; Viruses (medical); Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
Type :
conf
DOI :
10.1109/IMNC.2007.4456192
Filename :
4456192
Link To Document :
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