Title :
Design of tunneling field-effect transistor (TFET) with AlxGa1−xAS/InxGa1−xAs hetero-junction
Author :
Salehi, Mohammad Reza ; Abiri, Ebrahim ; Hosseini, Seyed Ebrahim ; Dorostkar, B.
Author_Institution :
Shiraz Univ. of Technol., Shiraz, Iran
Abstract :
In this paper a hetero-junction tunnel field effect transistor (HJ-TFET) with the channel length of 20 nm has been introduced and simulated in which the source/channel hetero-junction is AlxGa1-xAs/InxGa1-xAs. With precise selection of the mole fraction this hetero-junction, excellent device operation has been achieved. With optimized mole fraction and doping value in the source and the channel regions, on-state current as high as 18 μA/μm and very low off-state current of 10-18 is attained. Moreover in the proposed TFET Ion/Ioff ratio is 1013 which is very high. Also sub-threshold swing of 30 mv/decade is achieved which is well below 60 mv/decade.
Keywords :
aluminium compounds; field effect transistors; tunnel transistors; AlxGa1-xAs-InxGa1-xAs; HJ-TFET; heterojunction tunnel field effect transistor; subthreshold swing; Doping; Field effect transistors; Junctions; Logic gates; Photonic band gap; Tunneling; band-to-band tunneling; gated p-i-n diode; hetero-junction; high-k dielectric; sub threshold swing; tunneling transistor;
Conference_Titel :
Electrical Engineering (ICEE), 2013 21st Iranian Conference on
Conference_Location :
Mashhad
DOI :
10.1109/IranianCEE.2013.6599777
