Title :
An ultra-wideband common gate LNA with gm-boosted and noise cancelling techniques
Author :
Jamalkhah, Amin ; Hakimi, Ahmad
Author_Institution :
Dept. of Electr. Eng., Shahid Bahonor Univ. of Kerman, Kerman, Iran
Abstract :
In this paper, an ultra-wideband (UWB) common gate low-noise amplifier (LNA) with gm-boosted and noise-cancelling techniques is presented In this scheme we utilize gm-boosted stage for cancelling the noise of matching device. The bandwidth extension and flat gain are achieved by using of series and shunt peaking techniques. Simulated in .13 um Cmos technology, the proposed LNA achieved 2.38-3.4dB NF and S11 less than -11dB in the 3.1-10.6 GHz band Maximum power gain(S21) is 11dB and -3dB bandwidth is 1.25-11.33 GHz. The power consumption of LNA is 5.8mW.
Keywords :
CMOS integrated circuits; interference suppression; low noise amplifiers; microwave amplifiers; power consumption; CMOS technology; UWB common gate LNA; bandwidth 1.25 GHz to 11.33 GHz; flat gain; frequency 3.1 GHz to 10.6 GHz; gm-boosted techniques; noise cancelling techniques; power 5.8 mW; power consumption; power gain; shunt peaking techniques; size 0.13 mum; ultra-wideband common gate LNA; ultra-wideband common gate low-noise amplifier; Bandwidth; CMOS integrated circuits; Impedance matching; Low-noise amplifiers; Noise cancellation; Noise measurement; Low noise amplifier; Noise-cancelling; Ultra-wideband; gm-boosted; shunt and series peaking;
Conference_Titel :
Electrical Engineering (ICEE), 2013 21st Iranian Conference on
Conference_Location :
Mashhad
DOI :
10.1109/IranianCEE.2013.6599779
