A GaAs MMIC active filter with low noise and high gain

Author

Sabouri, S.F.

Author_Institution

Inst. of Electron. Syst., Aalborg Univ., Denmark

Volume

3

fYear

1998

fDate

7-12 June 1998

Firstpage

1177

Abstract

An active image rejection filter applying actively coupled passive resonators is presented. The filter has very low noise and high insertion gain, which may eliminate the use of an LNA in front-end applications. The filter is applicable as a single block LNA and image rejection filter in cordless and mobile telephone systems working around 2 GHz, e.g. DECT and DCS-1800 systems. The GaAs MMIC chip area is 3.3 mm/sup 2/. The filter has 12 dB insertion gain, 45 dB image rejection, 6.2 dB SSB noise figure and consumes 13 mW power from a 3 V supply.

Keywords

III-V semiconductors; MMIC; active filters; cordless telephone systems; gallium arsenide; integrated circuit noise; microwave filters; telephone sets; 12 dB; 13 mW; 2 GHz; 3 V; 6.2 dB; DCS-1800; DECT; GaAs; GaAs MMIC active filter; SSB noise figure; cordless telephone system; front end; image rejection; insertion gain; mobile telephone system; passive resonator; Active filters; Active noise reduction; Amplitude modulation; Gain; Gallium arsenide; MMICs; Noise figure; Passive filters; Resonator filters; Telephony;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1998 IEEE MTT-S International

Conference_Location

Baltimore, MD, USA

ISSN

0149-645X

Print_ISBN

0-7803-4471-5

Type

conf

DOI

10.1109/MWSYM.1998.700583

Filename

700583