DocumentCode :
3050056
Title :
Fabrication of high-aspect-ratio pillars by Proton Beam Writing and Application to DEP-devices
Author :
Furuta, Y. ; Uchiya, N. ; Nishikawa, H. ; Haga, J. ; Oikawa, M. ; Satoh, T. ; Ishii, Y. ; Kamiya, T. ; Nakao, R. ; Uchida, S.
Author_Institution :
Shibaura Inst. of Technol., Tokyo
fYear :
2007
fDate :
5-8 Nov. 2007
Firstpage :
340
Lastpage :
341
Abstract :
Scanning electron microscopy (SEM) images show that 21 mum thick SU-8 pillars on silicon develop after proton beam writing (PBW). These data demonstrate a capability of PBW to fabricate vertical pillars with a height of 21.0 mum and a width of as small as 1.1 mum with a high aspect ratio of 20, and with a uniformity over 700 mum square area. An optical microscope image shows a part of a dielectrophoretic (DEP) device, where the high-aspect-ratio SU-8 pillars with a 12 mum pitch are formed in the gap between the two surface electrodes. Preliminary investigation shows that Escherichia coli can be trapped at pillar structures under AC bias (3 volts, 100 kHz) of the two electrodes. The trapping behavior of DEP device with different structures and sizes are examined.
Keywords :
electrophoresis; lithography; optical microscopy; proton effects; resists; scanning electron microscopy; Escherichia coli; SEM; Si; dielectrophoretic device; frequency 100 kHz; high-aspect-ratio pillars; optical microscopy; pillar structures; proton beam writing; scanning electron microscopy; silicon; surface electrodes; voltage 3 V; Dielectrophoresis; Electrodes; Electron beams; Fabrication; Optical devices; Optical microscopy; Particle beams; Scanning electron microscopy; Silicon; Writing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
Type :
conf
DOI :
10.1109/IMNC.2007.4456243
Filename :
4456243
Link To Document :
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