Title :
Fabrication of High Precision X-ray Mask Using Silicon Dry Etching
Author :
Noda, Daiji ; Tsujii, Hiroshi ; Yashiro, Wataru ; Shimada, Kazuma ; Hattori, Tadashi
Author_Institution :
Hyogo Univ., Tokyo
Abstract :
The aim of the paper is to fabricated the new X-ray mask with accuracy patterns. In order to introduce the ICP etching system, high aspect ratio Si structure having a width of 1.9 mum was obtained. Using additionally Si dry etching in UV lithography process, high precision and rectangular X-ray masks having a resist microstructure of 4.5 mum pitch and 5 mum height has been fabricated. After Si wet etching, Au was electroplating on a groove of the resist microstructure as narrow as 2.7 mum, and successful formed high density and void-free. This study has verified that the new method is suitable for the high precision fabrication of finely and complexly patterned X-ray masks, and is expected to be used in the production of a wide variety of devices that have not yet been put into practice.
Keywords :
X-ray masks; crystal microstructure; electroplating; elemental semiconductors; silicon; sputter etching; ultraviolet lithography; Au; ICP; Si; UV lithography process; electroplating; high precision X-ray mask; high precision fabrication; inductively coupled plasma etching; microstructure; resist; silicon dry etching; size 5 mum; wet etching; Dry etching; Fabrication; Gold; Microstructure; Plasma applications; Resists; Scanning electron microscopy; Silicon; X-ray imaging; X-ray lithography;
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
DOI :
10.1109/IMNC.2007.4456255
