DocumentCode :
3050511
Title :
Fabrication of Bistable Prestressed Curved-Beam
Author :
Pane, Ivransa Z. ; Asano, Tanemasa
Author_Institution :
Kyushu Univ., Fukuoka
fYear :
2007
fDate :
5-8 Nov. 2007
Firstpage :
390
Lastpage :
391
Abstract :
Bistable curved-beams are micro electro mechanical systems (MEMS) that can switch over two stable bending states and maintain these states without consuming power. One of the most attractive applications of these structures is memory devices. A prestressed curved-beam of single crystal Si is fabricated through the sequences of the standard CMOS process using SOI. The theoretical analysis procedure for the bistable operation is established. The miniaturized bistable curved-beam is applied to memory devices.
Keywords :
elemental semiconductors; micromechanical devices; semiconductor storage; silicon; silicon-on-insulator; CMOS process; SOI; Si; bistable prestressed curved-beam; memory devices; single crystal; CMOS process; Cleaning; Dry etching; Fabrication; Micromechanical devices; Nonvolatile memory; Oxidation; Potential energy; Switches; Thermal force;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
Type :
conf
DOI :
10.1109/IMNC.2007.4456268
Filename :
4456268
Link To Document :
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