Title :
Electrical properties of dual-frequency plasma deposited silicon-compound films
Author :
Martinu, L. ; Klemberg-Sapieha, J.E. ; Küttel, O.M. ; Wertheimer, M.R.
Author_Institution :
Dept. of Eng. Phys., Ecole Polytech., Montreal, Que., Canada
Abstract :
A dual-frequency deposition approach is discussed which consists of a microwave discharge during which an RF-induced negative DC bias voltage VB is applied to the substrates. This permits one to control the flux and energy of the ions bombarding the growing films, offering the possibility of tailoring the film microstructure and composition, and maintaining a high deposition rate (10-100 Å/s) while keeping the substrate temperature low. The effects of VB on the electrical properties of various thin film materials are reported. Hydrogenated amorphous silicon, plasma silicon nitride, plasma silicon oxide, and oxynitride, and plasma polymerized hexamethyl-disiloxane films were studied. The dual-frequency deposition technique has proven to be a powerful approach for fabrication of high-quality dielectric and semiconducting thin-film materials
Keywords :
amorphous semiconductors; elemental semiconductors; hydrogen; insulating thin films; ion beam effects; plasma deposited coatings; polymer films; semiconductor growth; semiconductor thin films; silicon; silicon compounds; RF-induced negative DC bias voltage; Si:H; Si3N4; SiO2; SiOxNy; deposition rate; dielectric-thin films; dual-frequency deposition approach; film microstructure; microwave discharge; plasma polymerized hexamethyl-disiloxane films; semiconducting thin-film materials; substrate temperature; Dielectric materials; Dielectric thin films; Plasma materials processing; Plasma properties; Plasma temperature; Polymer films; Semiconductor materials; Semiconductor thin films; Silicon; Substrates;
Conference_Titel :
Electrical Insulation and Dielectric Phenomena, 1990. Annual Report., Conference on
Conference_Location :
Pocono Manor, PA
DOI :
10.1109/CEIDP.1990.201339
