DocumentCode :
3050857
Title :
Optimization of photo acid generator in the PAG-bonded resist
Author :
Fukkushima, Yasuyuki ; Ohnishi, Ryuji ; Watanabe, Takeo ; Shiotani, Hideaki ; Suzuki, Shouta ; Hayakawa, Masamichi ; Endo, Yusuke ; Yamanaka, Tomotaka ; Yusa, Shinichi ; Kinoshita, Hiroo
Author_Institution :
Hyogo Univ., Ako
fYear :
2007
fDate :
5-8 Nov. 2007
Firstpage :
430
Lastpage :
431
Abstract :
The authors have developed and evaluated the photo acid generator (PAG) bonded resist that is a chemically amplified (CA) resist to reduce line edge roughness (LER) for extreme ultraviolet lithography (EUVL). It can be considered that the PAG density of PAG bonded resist has higher uniformity than that of PAG blended resist. In addition, resolution of 25 nm was achieved by the 50 kV EB writing tool. It is confirmed that PAG bonded resist have characteristics of high resolution and low LER.
Keywords :
density; photoresists; ultraviolet lithography; EB writing tool; EUVL; LER; PAG density; PAG-bonded resist; chemically amplified resist; extreme ultraviolet lithography; high resolution resist; line edge roughness; photoacid generator; voltage 50 kV; Bonding; Chemical technology; Fabrication; Lithography; Polymers; Resins; Resists; Solvents; Ultraviolet sources; Writing;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
Type :
conf
DOI :
10.1109/IMNC.2007.4456288
Filename :
4456288
Link To Document :
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