Title :
Directional Control of Single-Walled Carbon Nanotubes on Surface-Engineered Sapphire
Author :
Imamoto, K. ; Ago, H. ; Ishigami, N. ; Ikeda, K. ; Tsuji, M. ; Ikuta, T. ; Takahashi, K.
Author_Institution :
Kyushu Univ., Fukuoka
Abstract :
In this article a new method is proposed to align SWNTs on single crystal sapphire substrates, which is called as "surface atomic arrangement-programmed (AAP) growth". On the A-and R-plane sapphire surfaces, SWNTs grew along the specific crystallographic directions due to anisotropic nanotube-substrate interaction. The correlation between the atomic arrangement and the step/terrace structure on the SWNT growth direction by tailoring step/terrace structure on A-plane sapphire is discussed.
Keywords :
atomic force microscopy; carbon nanotubes; nanoelectronics; nanotechnology; sapphire; AFM; Al2O3; C; anisotropic nanotube-substrate interaction; atomic arrangement-programmed growth; nanoelectronics; single-walled carbon nanotubes; surface-engineered sapphire substrates; Annealing; Carbon nanotubes; Chemical industry; Chemical technology; Chemical vapor deposition; Chemistry; Nanoscale devices; Nanostructured materials; Organic materials; Temperature control;
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
DOI :
10.1109/IMNC.2007.4456301
