• DocumentCode
    3051265
  • Title

    Low-energy electron emission using a Si/SiO2/Si cathode for nano-decomposition

  • Author

    Nishiguchi, K. ; Nagase, M. ; Yamaguchi, T. ; Fujiwara, A. ; Yamaguchi, H.

  • Author_Institution
    NTT Corp., Atsugi
  • fYear
    2007
  • fDate
    5-8 Nov. 2007
  • Firstpage
    470
  • Lastpage
    471
  • Abstract
    An SOS cathode was fabricated using MOSFET fabrication processes. The cathode can operate with low operation voltage in a low vacuum, which promises a simple system as well as molecular-level material engineering in various ambients.
  • Keywords
    MOSFET; cathodes; electron emission; silicon compounds; MOSFET fabrication process; SOS cathode; Si-SiO2-Si; low-energy electron emission; molecular-level material engineering; nanodecomposition; Anodes; Cathodes; Electron emission; Elementary particle vacuum; Low voltage; MOSFETs; Resists; Rough surfaces; Surface morphology; Surface roughness;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology, 2007 Digest of papers
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-4-9902472-4-9
  • Type

    conf

  • DOI
    10.1109/IMNC.2007.4456308
  • Filename
    4456308
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3051265