DocumentCode :
3051265
Title :
Low-energy electron emission using a Si/SiO2/Si cathode for nano-decomposition
Author :
Nishiguchi, K. ; Nagase, M. ; Yamaguchi, T. ; Fujiwara, A. ; Yamaguchi, H.
Author_Institution :
NTT Corp., Atsugi
fYear :
2007
fDate :
5-8 Nov. 2007
Firstpage :
470
Lastpage :
471
Abstract :
An SOS cathode was fabricated using MOSFET fabrication processes. The cathode can operate with low operation voltage in a low vacuum, which promises a simple system as well as molecular-level material engineering in various ambients.
Keywords :
MOSFET; cathodes; electron emission; silicon compounds; MOSFET fabrication process; SOS cathode; Si-SiO2-Si; low-energy electron emission; molecular-level material engineering; nanodecomposition; Anodes; Cathodes; Electron emission; Elementary particle vacuum; Low voltage; MOSFETs; Resists; Rough surfaces; Surface morphology; Surface roughness;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microprocesses and Nanotechnology, 2007 Digest of papers
Conference_Location :
Kyoto
Print_ISBN :
978-4-9902472-4-9
Type :
conf
DOI :
10.1109/IMNC.2007.4456308
Filename :
4456308
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3051265
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