• DocumentCode
    3051276
  • Title

    Novel Neutral Beam Etching Processes for Future Nanoscale Devices

  • Author

    Samukawa, Seiji

  • Author_Institution
    Tohoku Univ., Sendai
  • fYear
    2007
  • fDate
    5-8 Nov. 2007
  • Firstpage
    472
  • Lastpage
    473
  • Abstract
    In this paper, a highly efficient neutral-beam source is developed to accomplish the ultimate top-down etching for future nanoscale devices. The ultimate etching processes for future sub-50 nm devices in using the new neutral beam sources are introduced.
  • Keywords
    etching; nanotechnology; plasma materials processing; plasma sources; nanoscale devices; neutral beam etching; neutral-beam source; Apertures; Electrons; Etching; Nanoscale devices; Particle beams; Photonic crystals; Plasma applications; Plasma devices; Plasma sources; Plasma x-ray sources;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microprocesses and Nanotechnology, 2007 Digest of papers
  • Conference_Location
    Kyoto
  • Print_ISBN
    978-4-9902472-4-9
  • Type

    conf

  • DOI
    10.1109/IMNC.2007.4456309
  • Filename
    4456309
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3051276