A MEMS Probe Card with High Aspect Ratio Electroplated Posts

Author

Kim, Bong-Hwan ; Park, Bum-Jin ; Kum, Byung-Hoon ; Kim, Jong-Bok

Author_Institution

UniTest Inc., Gyeonggi

fYear

2007

fDate

5-8 Nov. 2007

Firstpage

482

Lastpage

483

Abstract

In this paper, a MEMS probe card developed with high aspect ratio post in order to implement high speed and high frequency testing and reduce thermal deformation effect during hot test of device under test (DUT) is discussed. High aspect ratio posts were fabricated by nickel electroplating after silicon etching and oxidation performed by a deep RIE etcher and furnace, respectively. Probe card makes contact with the metal pads of the DUT, thereby transmitting the test signals to the DUT. According to reliability test, there was no mechanical bending to cantilever beam and position difference to tips after the 350,000 time touchdowns. The proposed probe card is suitable for wafer-level testing and fine pitch device testing.

Keywords

cantilevers; electroplating; elemental semiconductors; micromechanical devices; nickel; oxidation; reliability; semiconductor device testing; silicon; sputter etching; MEMS probe card; Ni; Si; cantilever beam; deep RIE etching; device under test; fine pitch device testing; high speed-high frequency testing; mechanical bending; nickel electroplating; oxidation; reliability test; silicon etching; thermal deformation effect; wafer-level testing; Etching; Frequency; Furnaces; Micromechanical devices; Nickel; Oxidation; Probes; Silicon; Structural beams; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology, 2007 Digest of papers

Conference_Location

Kyoto

Print_ISBN

978-4-9902472-4-9

Type

conf

DOI

10.1109/IMNC.2007.4456314

Filename

4456314