Study on Nonlinear Electrical Characteristics in GaAs-based Three-branch Nanowire Junctions Controlled by Schottky Wrap Gates

Three-branch nanowire junctions (TBJs) have unique nonlinear electrical characteristics based on ballistic transport, which are useful for various logic and analog circuits. However, TBJ devices having rather large dimensions compared with electron mean free path, I_F, also show clear nonlinear curves even at room temperature (RT) and the origin has not been clarified yet. In this paper, we investigate a size and temperature dependence of nonlinear electrical characteristics of GaAs-based TBJ devices which have nanometer-sized Schottky wrap gates (WPGs). A simple model was introduced, which could explain experimental data reasonably well.