Temperature sensitivity of oscillation wavelength in 1.3 /spl mu/m-GaInAsP/InP quantum-well semiconductor lasers

Author

Higashi, Toshio ; Yamamoto, Tsuyoshi ; Ogita, Shouichi

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

10

Abstract

Characteristics of optical sources for access networks are required to be insensitive to the environment temperature change. In a relatively long-haul (> 10 km) and high bit-rate (>100Mb/s) transmission system, the effect of dispersion of optical fiber could not be negligible. Therefore, the stability of the oscillation wavelength to the temperature change could also be required. In this paper, we experimentally examined the temperature sensitivity of the oscillation wavelength in 1.3 /spl mu/m GaInAsP-InP QW semiconductor lasers.

Keywords

III-V semiconductors; gallium arsenide; indium compounds; infrared sources; laser transitions; optical fibre subscriber loops; optical transmitters; quantum well lasers; sensitivity; /spl mu/m-GaInAsP/InP quantum-well semiconductor lasers; 1.3 mum; 10 km; 100 Mbit/s; GaInAsP-InP; GaInAsP-InP QW semiconductor lasers; access networks; environment temperature change; long-haul high bit-rate transmission system; optical sources; oscillation wavelength; stability; temperature change; temperature sensitivity; Capacitive sensors; Distribution functions; Indium phosphide; Laser modes; Photonic band gap; Quantum well devices; Quantum wells; Temperature dependence; Temperature sensors; Wavelength measurement;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565096

Filename

565096