Title :
A symmetric double-core InGaAlAs waveguide photodiode for hybrid integration on optical platforms
Author :
Shishikura, M. ; Nakamura, H. ; Tanaka, S. ; Matsuoka, Y. ; Ono, T. ; Miyazaki, T. ; Tsuji, S.
Author_Institution :
Central Res. Lab., Hitachi Ltd., Tokyo, Japan
Abstract :
A symmetric InGaAlAs waveguide photodiode for low cost modules is investigated. A high responsivity of 0.95 A/W and a low dark current after 1900 hours aging of 300 pA are demonstrated. In this paper, we optimize the symmetric doublecore structure for higher responsivity while maintaining a wide coupling tolerance at a low operating voltage. We also describe the use of a surface passivation technique to achieve low dark current operation over a wide temperature range and after aging at 200 C.
Keywords :
III-V semiconductors; ageing; aluminium compounds; dark conductivity; gallium arsenide; indium compounds; integrated optics; integrated optoelectronics; life testing; modules; optical communication equipment; optical waveguides; photodiodes; semiconductor device testing; symmetry; 1900 h; 300 pA; InGaAlAs; aging; high responsivity; higher responsivity; hybrid integration; low cost modules; low dark current; low dark current operation; low operating voltage; optical platforms; surface passivation technique; symmetric InGaAlAs waveguide photodiode; symmetric double-core InGaAlAs waveguide photodiode; symmetric doublecore structure; wide coupling tolerance; wide temperature range; Aging; High speed optical techniques; Integrated optics; Optical coupling; Optical devices; Optical surface waves; Optical waveguides; Photodiodes; Planar waveguides; Programmable control;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565097
