DocumentCode :
3051735
Title :
High power division ratio dividers for millimeter-wave applications
Author :
Mirzavand, Laleh ; Mirzavand, R. ; Abdipour, A. ; Honari, Mohammad Mahdi
Author_Institution :
Electr. Eng. Dept., Amirkabir Univ. of Technol. (Tehran Polytech.), Tehran, Iran
fYear :
2013
fDate :
14-16 May 2013
Firstpage :
1
Lastpage :
4
Abstract :
A novel power divider which can provide a high power division ratio is presented for millimeter-wave applications. Similar to conventional non-equal Wilkinson dividers, it consists of two section transmission lines (TL) with different characteristic impedances and one isolation resistor. But, a round inductor is used to make the high impedance TL implementable in MMIC fabrications. A 60 GHz divider with a large power-dividing ratio (1:9) has been designed and simulated in a standard 130 nm GaAs process. The results show that the structure can effectively be used as an arbitrary power division ratio divider.
Keywords :
III-V semiconductors; MIMIC; MMIC; gallium arsenide; power dividers; GaAs; MMIC fabrication; characteristic impedance; frequency 60 GHz; high power division ratio dividers; isolation resistor; millimeter-wave application; round inductor; size 130 nm; transmission lines; Fabrication; Frequency conversion; Gallium arsenide; Impedance; Inductors; Power dividers; Resistors; 60 GHz; GaAs; Inductor; Wilkinson power divider; high power division ratio;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electrical Engineering (ICEE), 2013 21st Iranian Conference on
Conference_Location :
Mashhad
Type :
conf
DOI :
10.1109/IranianCEE.2013.6599881
Filename :
6599881
Link To Document :
بازگشت