DocumentCode :
305177
Title :
Experimental investigation of the electromagnetic fields at the aperture of a near-field scanning optical microscope
Author :
Decca, R.S. ; Drew, H.D. ; Emison, K.L. ; Tabatabaei, S.
Author_Institution :
Lab. for Phys. Sci., Maryland Univ., College Park, MD, USA
Volume :
1
fYear :
1996
fDate :
18-21 Nov. 1996
Firstpage :
34
Abstract :
In this work we use an approach that allows a determination of the spatial distribution of the electromagnetic field in the near-field region of the near field scanning optical microscope (NSOM) probe. We studied a MBE grown sample, which contains a 9 nm AlAs layer embedded in a GaAs matrix. The optical contrast arises from the difference in the index of refraction of the two materials. Topography related contrast is avoided by studying a freshly cleaved surface. With the NSOM working in emission mode the reflected light was collected in the far field.
Keywords :
III-V semiconductors; aluminium compounds; electromagnetic field theory; light polarisation; light reflection; optical microscopy; refractive index; 9 nm; AlAs; AlAs layer; GaAs; GaAs matrix; MBE grown sample; electromagnetic fields; emission mode; far field reflected light collection; freshly cleaved surface; index of refraction; near field scanning optical microscope probe; near-field region; near-field scanning optical microscope; near-field scanning optical microscope aperture EM fields; optical contrast; spatial distribution; topography related contrast; Apertures; Educational institutions; Electromagnetic fields; Optical imaging; Optical microscopy; Optical polarization; Optical refraction; Probes; Reflectivity; Surfaces;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
Type :
conf
DOI :
10.1109/LEOS.1996.565108
Filename :
565108
Link To Document :
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