Chemically Amplified Molecular Resists for E-Beam Lithography

Author

Manyam, J. ; Gibbons, F.P. ; Diegoli, S. ; Manickam, M. ; Preece, J.A. ; Palmer, R.E. ; Robinson, A.P.G.

Author_Institution

Birmingham Univ., Birmingham

fYear

2007

fDate

5-8 Nov. 2007

Firstpage

530

Lastpage

531

Abstract

Fullerene resist films are prepared on hydrogen terminated silicon by spin coating for electron beam lithography of microelectronic devices. Dense line and space patterns are achieved at varying post application bake temperature between 75 and 125degC for 10 min., post exposure bake between 90 and 130degC for 1.5 to 9 min. and exposure dose between 120 and 300 pC/cm. The chemically amplified resist system shows high resolution and sensitivity, wide process latitude and etch durability.

Keywords

electron beam lithography; etching; fullerenes; resists; spin coating; chemically amplified molecular resists; dense line pattern; electron beam lithography; etch durability; fullerene resist films; hydrogen terminated silicon; microelectronic devices; space pattern; spin coating; temperature 75 degC to 125 degC; temperature 90 degC to 130 degC; time 1.5 min to 9 min; time 10 min; Chemicals; Coatings; Electron beams; Hydrogen; Lithography; Microelectronics; Resists; Semiconductor films; Silicon; Temperature sensors;

fLanguage

English

Publisher

ieee

Conference_Titel

Microprocesses and Nanotechnology, 2007 Digest of papers

Conference_Location

Kyoto

Print_ISBN

978-4-9902472-4-9

Type

conf

DOI

10.1109/IMNC.2007.4456338

Filename

4456338