Title :
High CW power 0.8 μm-band Al-free active-region diode lasers
Author :
Wade, K. ; Mawst, L.J. ; Botez, D. ; Jansen, M. ; Fang, F. ; Nabiev, R.F.
Author_Institution :
Reed Center for Photonics, Wisconsin Univ., Madison, WI, USA
Abstract :
100 μm-wide stripe, Al-free, uncoated, 0.83 μm diode lasers provide 4.7 W CW maximum output power and 45% maximum CW wallplug efficiency at T=20°C. The active region consists of a 150 Å In 0.09Ga0.91As0.8Pb0.2 quantum well surrounded by 0.4 μm In0.5Ga0.5P confining layers and 1.5 μm In0.5(Ga0.5Al0.5)P cladding layers. For 1 mm-long devices, we obtain threshold-current densities as low as 220 A/cm2 and threshold-current characteristic temperature, T0, as high as 160 K
Keywords :
III-V semiconductors; current density; gallium arsenide; indium compounds; laser transitions; quantum well lasers; 0.4 mum; 0.8 μm-band Al-free active-region diode lasers; 0.8 mum; 1.5 mum; 100 μm-wide stripe uncoated diode lasers; 150 angstrom; 160 K; 20 degC; 4.7 W; 45 percent; In(Ga0.5Al0.5)P; In0.09Ga0.91As0.8Pb0.2 ; In0.09Ga0.91As0.8Pb0.2 quantum well; In0.5(Ga0.5Al0.5)P cladding layers; In0.5Ga0.5P; In0.5Ga0.5P confining layers; active region; high CW power; maximum CW wallplug efficiency; maximum output power; threshold-current characteristic temperature; threshold-current densities; Diode lasers; Power generation; Power lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565113
