Title :
A study of structures with Al-free QWs in AlGaAs waveguides for laser diodes emitting at 800 nm
Author :
Erber, G. ; Bugge, F. ; Sebastian, J. ; Voge, K. ; Wenzel, H. ; Weyers, M.
Author_Institution :
Ferdinand-Braun-Inst., Berlin, Germany
Abstract :
High power laser diodes emitting at 800 nm using strained GaAsP- and unstrained InGaAsP-SQWs in the active region are investigated. A very small far field angle of 23/spl deg/ and a high efficiency of 1.1 W/A for 1000 /spl mu/m long laser diodes are achieved. A 1 cm bar with 37.5 % active area shows a CW-output power of 60 W.
Keywords :
III-V semiconductors; aluminium compounds; current density; gallium arsenide; indium compounds; laser reliability; laser transitions; quantum well lasers; waveguide lasers; 1 cm; 1000 mum; 60 W; 800 nm; Al-free QW; AlGaAs; AlGaAs waveguides; CW-output power; GaAsP; InGaAsP; active region; high efficiency; high power; laser diodes; strained GaAsP-SQW; unstrained InGaAsP-SQW; very small far field angle; Current density; Diode lasers; Laser theory; Materials science and technology; Power lasers; Quantum well lasers; Reliability engineering; Temperature; Threshold current; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565114
