High power Al-free 808 nm laser bars

Author

Näppi, J. ; Ovtchinnikov, A. ; Asonen, H. ; Heinemann, S. ; Daiminger, F.

Author_Institution

Tutcore Ltd., Tampere, Finland

Volume

1

fYear

1996

fDate

18-21 Nov. 1996

Firstpage

48

Abstract

We have grown Al-free GaInAsP/GaInP 808 nm strained single quantum well laser structures by the gas source molecular beam epitaxy method. Processed laser bars are shown to possess very good performance in terms of efficiency and short term reliability. They could replace AlGaAs laser bars in high power applications if the future long term reliability tests correlate with the present short term reliability data.

Keywords

III-V semiconductors; chemical beam epitaxial growth; gallium arsenide; gallium compounds; indium compounds; laser reliability; quantum well lasers; semiconductor growth; 808 nm; Al-free GaInAsP/GaInP 808 nm laser structures; GaInAsP-GaInP; efficiency; gas source molecular beam epitaxy method; high power Al-free 808 nm laser bars; long term reliability tests; performance; short term reliability; strained single quantum well laser structures; Bars; Diode lasers; Gas lasers; Molecular beam epitaxial growth; Power lasers; Power system reliability; Pump lasers; Quantum cascade lasers; Quantum well lasers; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE

Conference_Location

Boston, MA, USA

Print_ISBN

0-7803-3160-5

Type

conf

DOI

10.1109/LEOS.1996.565115

Filename

565115