Title :
Terahertz nonlinearities in semiconductor quantum wells
Author_Institution :
Sch. of Electr. & Comput. Eng., Georgia Inst. of Technol., Atlanta, GA, USA
fDate :
27 Sept.-1 Oct. 2004
Abstract :
Results for terahertz/optical sum/difference-frequency generation (terahertz-sideband generation) in quantum wells are presented. This may provide the basis for frequency-shifting devices in the near infrared or visible with shifts on the order of 1 THz.
Keywords :
III-V semiconductors; absorption coefficients; aluminium compounds; gallium arsenide; optical frequency conversion; semiconductor quantum wells; submillimetre wave generation; 1 THz; GaAs-AlGaAs; difference frequency generation; frequency shifting devices; optical sum frequency generation; semiconductor quantum wells; terahertz frequency generation; terahertz nonlinearities; terahertz sideband generation; Absorption; Equations; Frequency; Nonlinear optics; Optical beams; Optical materials; Optical mixing; Polarization; Quantum computing; Submillimeter wave technology;
Conference_Titel :
Infrared and Millimeter Waves, 2004 and 12th International Conference on Terahertz Electronics, 2004. Conference Digest of the 2004 Joint 29th International Conference on
Print_ISBN :
0-7803-8490-3
DOI :
10.1109/ICIMW.2004.1421959
