Improvement of uniformity and electrical properties of Fe-doped InP by wafer annealing

Author

Jiménez, J. ; Avella, M. ; De la Puente, E.

Author_Institution

Fisica de la Mater. Condensada, ETS Ingenieros Ind., Valladolid, Spain

fYear

1998

fDate

1998

Firstpage

39

Lastpage

44

Abstract

Thermal treatments are crucial steps for improving the quality of semi-insulating InP substrates. The result of these treatments depends on the starting material and the specific annealing conditions. The best results in terms of the electrical properties and homogeneity are obtained by annealing Fe-doped InP wafers. The influence of the specific annealing conditions is discussed. The best results are obtained for long annealing times (50 hours) and slow cooling rates, which give good homogeneity, high carrier mobility and high enough electrical compensation

Keywords

Hall effect; III-V semiconductors; annealing; carrier mobility; electrical resistivity; indium compounds; iron; Hall effect; InP:Fe; carrier mobility; cooling rate; electrical compensation; homogeneity; resistivity; semi-insulating InP substrate; uniformity; wafer annealing; Annealing; Conductivity; Doping; Electronics cooling; High speed integrated circuits; High-speed electronics; Indium phosphide; Iron; Optical materials; Photonic integrated circuits;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on

Conference_Location

Berkeley, CA

Print_ISBN

0-7803-4354-9

Type

conf

DOI

10.1109/SIM.1998.785072

Filename

785072