Title :
Improvement of uniformity and electrical properties of Fe-doped InP by wafer annealing
Author :
Jiménez, J. ; Avella, M. ; De la Puente, E.
Author_Institution :
Fisica de la Mater. Condensada, ETS Ingenieros Ind., Valladolid, Spain
Abstract :
Thermal treatments are crucial steps for improving the quality of semi-insulating InP substrates. The result of these treatments depends on the starting material and the specific annealing conditions. The best results in terms of the electrical properties and homogeneity are obtained by annealing Fe-doped InP wafers. The influence of the specific annealing conditions is discussed. The best results are obtained for long annealing times (50 hours) and slow cooling rates, which give good homogeneity, high carrier mobility and high enough electrical compensation
Keywords :
Hall effect; III-V semiconductors; annealing; carrier mobility; electrical resistivity; indium compounds; iron; Hall effect; InP:Fe; carrier mobility; cooling rate; electrical compensation; homogeneity; resistivity; semi-insulating InP substrate; uniformity; wafer annealing; Annealing; Conductivity; Doping; Electronics cooling; High speed integrated circuits; High-speed electronics; Indium phosphide; Iron; Optical materials; Photonic integrated circuits;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785072
