Title :
Semi-insulating InP crystal wafers characterized by different nondestructive techniques
Author :
Yamada, Masayoshi ; Fukuzawa, Masayuki ; Akita, Masanobu ; Herms, A. ; Uchida, Masayuki ; Oda, Osamu
Author_Institution :
Dept. of Electron. & Inf. Sci., Kyoto Inst. of Technol., Japan
Abstract :
Nondestructive techniques of mapping of residual strain, photoluminescence and resistivity were utilized to optimize the multiple wafer annealing (MWA) procedure of undoped or slightly Fe doped InP crystal wafers under phosphorous atmosphere. The annealing procedure optimized did not additionally produce unwanted residual strain but reduced and homogenized it. In conclusion, MWA has proved to be a promising method to obtain semi-insulating InP crystals without undesired high Fe doping
Keywords :
III-V semiconductors; annealing; electrical resistivity; indium compounds; internal stresses; photoluminescence; InP; multiple wafer annealing; nondestructive techniques; phosphorus atmosphere; photoluminescence; residual strain; resistivity; semi-insulating InP crystal wafers; Annealing; Capacitive sensors; Conductivity; Crystals; Doping; Indium phosphide; Iron; Photoluminescence; Strain measurement; Thermal stresses;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785073
