Carbon in semi-insulating gallium arsenide: a comparative study between FTIR, SSMS and CPAA

Author

Alt, H.Ch. ; Wiedemann, B. ; Meyer, J.D. ; Michelmann, R.W. ; Bethge, K.

Author_Institution

Physikalische Technik, Fachhochschule Munchen, Germany

fYear

1998

fDate

1998

Firstpage

53

Lastpage

56

Abstract

Local vibrational mode absorption was used to investigate the electrically active fraction of C in semi-insulating GaAs. A strictly linear relationship to the total chemical C concentration measured by spark source mass spectrometry is found. Using charged particle activation analysis as a reference method, a new calibration factor f ₇₇=(7.2±0.2)×10¹⁵ cm^-1 for the absorption integral at 77 K is derived. Based on the temperature dependence of the absorption a calibration factor f₃₀₀=(7.5±0.5)×10¹⁵ cm^-1 is suggested for the room temperature measurement

Keywords

Fourier transform spectra; III-V semiconductors; carbon; gallium arsenide; impurities; impurity absorption spectra; infrared spectra; localised modes; 77 K; C concentration; FTIR spectra; GaAs:C; calibration factor; charged particle activation analysis; electrically active C fraction; local vibrational mode absorption; semi-insulating GaAs; spark source mass spectrometry; temperature dependence; Activation analysis; Calibration; Chemical analysis; Electromagnetic wave absorption; Gallium arsenide; Hall effect; Infrared spectra; Mass spectroscopy; Optical scattering; Sparks;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on

Conference_Location

Berkeley, CA

Print_ISBN

0-7803-4354-9

Type

conf

DOI

10.1109/SIM.1998.785075

Filename

785075