Title :
New techniques for the characterization of defect levels in semi-insulating materials
Author :
Longeaud, C. ; Kleider, J.P. ; Kaminski, P. ; Kozlowski, R. ; Pawlowski, M. ; Cwirko, R.
Author_Institution :
Lab. de Genie Electrique, Paris VI Univ., France
Abstract :
Deep levels in semi-insulating (SI) GaAs have been investigated by two complementary techniques: the high resolution photoinduced transient spectroscopy performed at the institute of electronic materials technology, and the modulated photocurrent experiment performed at the Laboratoire de Genie Electrique de Paris. In this paper we present and compare results obtained by both techniques for SI GaAs
Keywords :
III-V semiconductors; deep level transient spectroscopy; deep levels; gallium arsenide; photoconductivity; GaAs; defect levels; high resolution photoinduced transient spectroscopy; modulated photocurrent experiment; semi-insulating materials; Electrodes; Gallium arsenide; High speed integrated circuits; High-speed electronics; Impurities; Insulation; Materials science and technology; Photoconductivity; Semiconductor materials; Spectroscopy;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785079
