DocumentCode :
305213
Title :
Low-temperature near-field spectroscopy of quantum dots
Author :
Arakawa, Y. ; Toda, Y. ; Nagamune, Y. ; Ohtsu, M.
Author_Institution :
Tokyo Univ., Japan
Volume :
1
fYear :
1996
fDate :
18-21 Nov. 1996
Firstpage :
107
Abstract :
We discuss recent progress on nanoprobing techniques for quantum dots using low-temperature near-field spectroscopy. We present measurements for GaAs quantum dots which are fabricated by the selective epitaxial growth on SiO/sub 2/-patterned GaAs (100) substrates by metal organic chemical vapor deposition. Photoluminescence spectra are reported and carrier diffusion monitoring is carried out by varying the intensity of the excitation light.
Keywords :
III-V semiconductors; carrier lifetime; gallium arsenide; photoluminescence; semiconductor quantum dots; 18 K; GaAs; GaAs quantum dots; SiO/sub 2/-patterned GaAs (100) substrates; carrier diffusion monitoring; excitation light intensity; low-temperature near-field spectroscopy; metal organic chemical vapor deposition; nanoprobing techniques; photoluminescence spectra; selective epitaxial growth; Pixel; Spectroscopy; US Department of Transportation;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
Type :
conf
DOI :
10.1109/LEOS.1996.565148
Filename :
565148
Link To Document :
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