Title :
Change of electrical and structural properties of non-stoichiometric GaAs through Be doping
Author :
Luysberg, M. ; Specht, P. ; Thul, K. ; Liliental-Weber, Z. ; Weber, E.R.
Author_Institution :
Inst. fur Festkorperforschung, Forschungszentrum Julich GmbH, Germany
Abstract :
he effect of Be doping on the electrical and structural properties of low temperature MBE grown GaAs (LT-GaAs) is investigated for high Be doping levels. As in undoped LT-GaAs As precipitates form upon annealing. However, from the Ostwald ripening of As precipitates a considerably larger activation energy for As diffusion is found in Be doped samples. Therefore, Be doping retards the growth of As precipitates and leads to a thermal stabilization. The electrical properties of as-grown and annealed samples can be explained by the residual point defect model. After short annealing times highly resistive material is obtained, i.e. the Fermi level is pinned at the deep AsGa donor midgap states
Keywords :
Fermi level; III-V semiconductors; annealing; beryllium; gallium arsenide; molecular beam epitaxial growth; point defects; semiconductor doping; semiconductor epitaxial layers; semiconductor growth; As diffusion; As precipitates; Be doping; Fermi level; GaAs:Be; MBE grown; Ostwald ripening; SiC; annealing; deep AsGa donor midgap states; electrical properties; residual point defect model; short annealing times; structural properties; thermal stabilization; Annealing; Bonding; Conductivity; Doping; Electron traps; Gallium arsenide; Lattices; Materials science and technology; Molecular beam epitaxial growth; Temperature;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785082
