The influence of growth and annealing conditions on the structural quality of LT-GaAs layers grown on (111)B substrate by molecular beam epitaxy

Author

Guerret-Piécourt, C. ; Toufella, M. ; Bedel, E. ; Puech, P. ; BenAssayag, G. ; Bardinal, V. ; Fontaine, C. ; Claverie, A. ; Carles, R.

Author_Institution

Lab. d´´Autom. et d´´Anal. des Syst., CNRS, Toulouse, France

fYear

1998

fDate

1998

Firstpage

97

Lastpage

100

Abstract

The structural quality of the layers grown at low temperature on (111)B GaAs is investigated by Raman spectroscopy and transmission electron microscopy. It is shown that both the amorphous layers grown at 150°C and the defect-rich layers (mostly based on multiple twinning) grown at 250°C can recover perfect crystalline quality upon annealing provided, (i) they are not too thick (<350 nm) and, (ii) the annealing temperature is high enough. Both conditions are necessary to allow the reordering of the layer initiated at the interface to propagate towards the surface without being stopped at dislocation nodes

Keywords

III-V semiconductors; Raman spectra; annealing; gallium arsenide; molecular beam epitaxial growth; semiconductor epitaxial layers; semiconductor growth; transmission electron microscopy; (111)B substrate; 150 C; 250 C; 350 nm; GaAs; LT-GaAs layers; Raman spectroscopy; annealing; annealing conditions; annealing temperature; dislocation nodes; growth; molecular beam epitaxy; multiple twinning; perfect crystalline quality; structural quality; transmission electron microscopy; Amorphous materials; Annealing; Gallium arsenide; Molecular beam epitaxial growth; Optical materials; Raman scattering; Spectroscopy; Substrates; Temperature; Transmission electron microscopy;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on

Conference_Location

Berkeley, CA

Print_ISBN

0-7803-4354-9

Type

conf

DOI

10.1109/SIM.1998.785084

Filename

785084