Title :
Ultrafast response times and enhanced optical nonlinearity in annealed and Beryllium doped low-temperature grown GaAs
Author :
Haiml, M. ; Prasad, A. ; Morier-Genoud, F. ; Siegner, U. ; Keller, U. ; Weber, E.R.
Author_Institution :
Inst. for Quantum Electron., Swiss Fed. Inst. of Technol., Zurich, Switzerland
Abstract :
We have quantitatively studied the optical nonlinearity in annealed and in beryllium doped low-temperature grown (LT) GaAs. This study has been complemented by measurements of the temporal decay of the absorption modulation on the 20-fs time scale. Our results show that both be doping and annealing of LT GaAs yield a material with superior properties for ultrafast all-optical switching applications
Keywords :
III-V semiconductors; annealing; beryllium; gallium arsenide; nonlinear optics; semiconductor doping; semiconductor epitaxial layers; 20 fs; GaAs:Be; SiC; absorption modulation; annealed; enhanced optical nonlinearity; temporal decay; ultrafast all-optical switching applications; ultrafast response times; Absorption; Annealing; Gallium arsenide; Optical losses; Optical modulation; Optical pulses; Pulse measurements; Pulse modulation; Time factors; Ultrafast optics;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785085
