Title :
An ion-implanted anti-resonant Fabry Perot saturable absorber for passive mode-locking of solid state lasers
Author :
Lederer, Max ; Luther-Davies, Barry ; Tan, Hoe ; Jagadish, Chennupati
Author_Institution :
Laser Phys. Centre, Australian Nat. Univ., Canberra, ACT, Australia
Abstract :
We have fabricated GaAs based anti-resonant Fabry-Perot saturable absorbers (A-FPSAs) for passively mode-locking near infrared solid state lasers, using Metal Organic Vapour Phase Epitaxy (MOVPE) growth followed by ion-implantation and optional thermal annealing. We present differential reflectivity measurements showing the effect of ion implantation and annealing. The devices were characterised for their large signal response including saturation fluence, modulation depth and non-bleachable losses-important parameters for passive mode-locking. Finally we demonstrate mode-locking using our samples within a Ti:sapphire laser observing stable and reliable self-starting, pulses in the 100 fs range, and 50 nm tunability. Results of computer simulations are in good agreement with the experiments
Keywords :
III-V semiconductors; MOCVD; annealing; digital simulation; gallium arsenide; ion implantation; laser accessories; laser mode locking; laser theory; laser tuning; optical losses; optical saturable absorption; reflectivity; semiconductor device models; semiconductor epitaxial layers; semiconductor growth; solid lasers; vapour phase epitaxial growth; 100 fs; Al2O3:Ti; GaAs; GaAs based anti-resonant Fabry-Perot saturable absorbers; MOVPE; Ti:sapphire laser; annealing; computer simulations; differential reflectivity; ion implantation; ion-implantation; ion-implanted anti-resonant Fabry Perot saturable absorber; metal organic vapour phase epitaxy; modulation depth; near infrared solid state laser; nonbleachable losses; passive mode-locking; saturation fluence; self-starting; solid state lasers; thermal annealing; Annealing; Epitaxial growth; Epitaxial layers; Fabry-Perot; Gallium arsenide; Ion implantation; Laser mode locking; Laser stability; Reflectivity; Solid lasers;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785086
