Electrical properties and thermal stability of Be-doped nonstoichiometric GaAs

Author

Lutz, R.C. ; Specht, P. ; Zhao, R. ; Weber, E.R.

Author_Institution

Dept. of Mater. Sci. & Min. Eng., California Univ., Berkeley, CA, USA

fYear

1998

fDate

1998

Firstpage

113

Lastpage

117

Abstract

Beryllium doping of arsenic rich GaAs grown by MBE at low temperatures (LT-GaAs) allows one to grow GaAs with ultrashort carrier lifetimes at growth temperatures of 250° to 300°C. Hall effect and resistivity measurements showed that in as-grown samples hopping conduction can be suppressed in this growth temperature range. Semi-insulating behavior of as-grown LT-GaAs:Be can be achieved by careful adjustment of temperature and Be-doping. In addition, Be-doped LT-GaAs grown in this temperature range shows increased thermal stability of the arsenic antisite defects (As_Ga)

Keywords

Hall effect; III-V semiconductors; antisite defects; beryllium; carrier lifetime; electrical resistivity; gallium arsenide; hopping conduction; semiconductor doping; semiconductor epitaxial layers; thermal stability; 250 to 300 C; Be-doped nonstoichiometric GaAs; Be-doping; GaAs:Be; Hall effect; MBE; arsenic antisite defects; arsenic rich GaAs; as-grown LT-GaAs:Be; as-grown samples; beryllium doping; electrical properties; hopping conduction; low temperature; resistivity; semi-insulating behavior; thermal stability; ultrashort carrier lifetimes; Absorption; Annealing; Calibration; Conductivity; Gallium arsenide; Magnetic films; Molecular beam epitaxial growth; Substrates; Temperature; Thermal stability;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on

Conference_Location

Berkeley, CA

Print_ISBN

0-7803-4354-9

Type

conf

DOI

10.1109/SIM.1998.785088

Filename

785088