DocumentCode
305230
Title
A very uniform single mode addressable oxide confined VCSEL array
Author
Giaretta, G. ; Li, M.Y. ; Li, G.S. ; Yuen, W. ; Chang-Hasnain, C.J.
Author_Institution
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Volume
1
fYear
1996
fDate
18-21 Nov. 1996
Firstpage
146
Abstract
Summary form only given. We report the first single mode independently addressable oxide confined GaAs-AlGaAs QW DBR VCSEL laser array. The 4/spl times/8 VCSEL array has very uniform electrical, modal and geometrical characteristics that make it ideal for 2D array applications.
Keywords
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; geometry; laser mirrors; laser modes; oxidation; quantum well lasers; semiconductor laser arrays; 2D array applications; 4/spl times/8 VCSEL array; GaAs-AlGaAs; GaAs-AlGaAs QW DBR VCSEL laser array; electrical characteristics; geometrical characteristics; modal characteristics; very uniform single mode addressable oxide confined VCSEL array; Apertures; Mirrors; Optical arrays; Optical signal processing; Optical surface waves; Oxidation; Surface emitting lasers; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;
fLanguage
English
Publisher
ieee
Conference_Titel
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location
Boston, MA, USA
Print_ISBN
0-7803-3160-5
Type
conf
DOI
10.1109/LEOS.1996.565167
Filename
565167
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