Title :
A very uniform single mode addressable oxide confined VCSEL array
Author :
Giaretta, G. ; Li, M.Y. ; Li, G.S. ; Yuen, W. ; Chang-Hasnain, C.J.
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Summary form only given. We report the first single mode independently addressable oxide confined GaAs-AlGaAs QW DBR VCSEL laser array. The 4/spl times/8 VCSEL array has very uniform electrical, modal and geometrical characteristics that make it ideal for 2D array applications.
Keywords :
III-V semiconductors; aluminium compounds; distributed Bragg reflector lasers; gallium arsenide; geometry; laser mirrors; laser modes; oxidation; quantum well lasers; semiconductor laser arrays; 2D array applications; 4/spl times/8 VCSEL array; GaAs-AlGaAs; GaAs-AlGaAs QW DBR VCSEL laser array; electrical characteristics; geometrical characteristics; modal characteristics; very uniform single mode addressable oxide confined VCSEL array; Apertures; Mirrors; Optical arrays; Optical signal processing; Optical surface waves; Oxidation; Surface emitting lasers; Threshold current; Threshold voltage; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
Conference_Location :
Boston, MA, USA
Print_ISBN :
0-7803-3160-5
DOI :
10.1109/LEOS.1996.565167
