Title :
Twinning of As precipitates in low-temperature GaAs during high temperature annealing
Author :
Ruvimov, S. ; Dieke, Ch ; Washburn, J. ; Liliental-Weber, Z.
Author_Institution :
Lawrence Berkeley Nat. Lab., Berkeley, CA, USA
Abstract :
Twinning of nano-scale As precipitates formed in low-temperature GaAs during high temperature annealing was studied by high resolution electron microscopy. Symmetrical {1¯104¯} twins were nucleated during crystallization of amorphous or liquid-like As precipitates. Nucleation of rhombohedral As appears to be most favorable on the short facet that is parallel to the {111}B plane of the GaAs. Twin formation then often initiates on the long facet bounded by the {111}A plane. The crystallization front terminates with a void because of the shrinkage of the As volume during solidification
Keywords :
III-V semiconductors; annealing; crystallisation; gallium arsenide; nanostructured materials; nucleation; precipitation; semiconductor epitaxial layers; solidification; transmission electron microscopy; twinning; voids (solid); As precipitates; GaAs; HREM; amorphous As precipitates; crystallization; crystallization front; high resolution electron microscopy; high temperature annealing; liquid-like As precipitates; low-temperature GaAs; nano-scale As precipitates; nucleation; shrinkage; solidification; symmetrical twins; twin formation; twinning; void; Amorphous materials; Crystallization; Crystallography; Electron microscopy; Gallium arsenide; Image resolution; Laboratories; Rapid thermal annealing; Shape; Temperature;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785091
