• DocumentCode
    305241
  • Title

    Single quantum dot spectroscopy

  • Author

    Gammon, D. ; Snow, E.S. ; Shanabrook, B.V. ; Brown, S.W. ; Kennedy, T.A. ; Katzer, D.S. ; Park, D.

  • Author_Institution
    Naval Res. Lab., Washington, DC, USA
  • Volume
    1
  • fYear
    1996
  • fDate
    18-21 Nov. 1996
  • Firstpage
    174
  • Abstract
    Semiconductor quantum dots localize the exciton in all three spatial dimensions and completely quantize the exciton energy spectrum. In the past, experimental studies of quantum dots have been severely hampered by large fluctuations in the dot size which leads to large inhomogeneous broadening in the optical spectra. To avoid this problem, we have developed the capability to measure the photoluminescence (PL) spectra of single quantum dots which are formed naturally from the monolayer-sized interface fluctuations in a thin GaAs/AlGaAs quantum well. This is accomplished by reducing the laser spot size through the use of apertures patterned in an Al mask evaporated directly on the sample surface. By exciting and detecting through a single aperture we obtain PL spectra in which each spectrum is composed of quantum PL lines, the number of which is reduced by going to smaller apertures.
  • Keywords
    III-V semiconductors; aluminium compounds; excitons; gallium arsenide; photoluminescence; semiconductor quantum dots; spectral line broadening; Al; Al mask; GaAs-AlGaAs; apertures; dot size; exciton; exciton energy spectrum; large inhomogeneous broadening; laser spot size; monolayer-sized interface fluctuations; optical spectra; photoluminescence spectra; quantum PL lines; semiconductor quantum dots; single aperture; single quantum dot spectroscopy; spatial dimensions; thin GaAs/AlGaAs quantum well; Apertures; Excitons; Fluctuations; Gallium arsenide; Photoluminescence; Quantum dot lasers; Quantum dots; Quantum well lasers; Spectroscopy; Surface emitting lasers;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1996. LEOS 96., IEEE
  • Conference_Location
    Boston, MA, USA
  • Print_ISBN
    0-7803-3160-5
  • Type

    conf

  • DOI
    10.1109/LEOS.1996.565181
  • Filename
    565181