Title :
Formation of a quasi-neutral region in Schottky diodes based on semi-insulating GaAs
Author :
Rogalla, Markus ; Runge, Kay
Author_Institution :
Fakultat fur Phys., Albert-Ludwigs-Univ., Freiburg, Germany
Abstract :
A model is developed for the electric field distribution beneath the Schottky contact in semi-insulating (SI) GaAs particle detectors. The model is based on a field-enhanced electron capture of the EL2 defect. The influence of the compensation mechanism in SI GaAs on the field distribution and leakage current density of the detectors is discussed. The detailed understanding allows a device optimisation
Keywords :
III-V semiconductors; Schottky diodes; charge compensation; current density; deep levels; defect states; electron traps; gallium arsenide; interface states; leakage currents; semiconductor counters; semiconductor device models; EL2 defect; GaAs; GaAs particle detectors; SI GaAs; Schottky contact; Schottky diodes; compensation mechanism; device optimisation; electric field distribution; field-enhanced electron capture; leakage current density; model; quasi-neutral region; semi-insulating GaAs; Charge carriers; Electrons; Gallium arsenide; Ionization; Leakage current; Radiation detectors; Radioactive decay; Schottky barriers; Schottky diodes; Voltage;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785095
