Title :
Electron-irradiation-induced disordering of CuPt-ordered GaInP studied by TEM-mode optical spectroscopy
Author :
Ohno, Y. ; Kawai, Y. ; Takeda, S.
Author_Institution :
Dept. of Phys., Osaka Univ., Japan
Abstract :
Electron-irradiation-induced disordering in CuPt-ordered GaInP has been examined by in-situ photoluminescence and cathodoluminescence spectroscopy in a transmission electron microscope. A decrease of luminescence intensity by the electron-irradiation in the energy range above 120 keV has been observed, and we have shown that the decrease is due to the Frenkel-type defects on the Ga and In sublattices generated by electron-irradiation. We have proposed that an electron-irradiation-induced migration of the Ga and In-vacancies dominates the disordering in the dose range below 2×1020 cm-2 cm
Keywords :
Frenkel defects; III-V semiconductors; cathodoluminescence; electron beam effects; gallium compounds; indium compounds; order-disorder transformations; photoluminescence; self-diffusion; spectral line intensity; transmission electron microscopy; vacancies (crystal); 120 keV; CuPt-ordered GaInP; Frenkel-type defects; GaInP; TEM-mode optical spectroscopy; cathodoluminescence spectroscopy; electron-irradiation; electron-irradiation-induced disordering; electron-irradiation-induced migration; in-situ photoluminescence; luminescence intensity; sublattices; vacancies; Electron microscopy; Epitaxial growth; Integrated circuit modeling; Optical microscopy; Photoluminescence; Physics; Spectroscopy; Spontaneous emission; Substrates; Transmission electron microscopy;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785102
