Title :
GaN-based VCSEL fabricated on nonpolar GaN substrates
Author :
Nakamura, Shigenari
Author_Institution :
Mater. & ECE Depts., Univ. of California Santa Barbara, Santa Barbara, CA, USA
fDate :
June 30 2013-July 4 2013
Abstract :
The vertical cavity surface emitting laser diode (VCSEL) was fabricated using nonpolar GaN substrates. The direction of the polarization of the lasing was along a-axis. The emission wavelength was 412nm and the threshold current was 80mA using 10 μm aperture. The selective etching was used to make a short cavity of the VCSELS.
Keywords :
III-V semiconductors; gallium compounds; optical fabrication; semiconductor lasers; surface emitting lasers; wide band gap semiconductors; GaN; VCSEL; current 80 mA; laser diode; nonpolar substrates; size 10 mum; vertical cavity surface emitting lasers; wavelength 412 nm; Cavity resonators; Diode lasers; Gallium nitride; Substrates; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6599919
