DocumentCode
3052556
Title
X-ray studies of AlxGa1-xAs implanted with 1.5 MeV Se ions
Author
Wierzchowski, W. ; Wieteska, K. ; Turos, A. ; Graeff, W. ; Groetzschel, R.
Author_Institution
Inst. of Electron. Mater. Technol., Warsaw, Poland
fYear
1998
fDate
1998
Firstpage
181
Lastpage
184
Abstract
AlxGa1-xAs epitaxial layers with x=0.45 and low dislocation density, implanted with 1.5 MeV Se+ ions to doses of 6×1013-1×1015 ions/cm2 were studied with X-ray diffraction methods using conventional and synchrotron X-ray sources. The implantation caused considerable increase of lattice parameter reaching the maximum at the dose of 2×1014 ions/cm2. It was also found that the implantation produced a relatively thick layer with almost constant lattice parameter. The applied doses did not produce lattice amorphization at room temperature
Keywords
III-V semiconductors; X-ray diffraction; aluminium compounds; dislocation density; gallium arsenide; ion implantation; lattice constants; selenium; semiconductor doping; semiconductor epitaxial layers; 20 C; AlxGa1-xAs; AlGaAs:Se; Se ions; X-ray diffraction; X-ray studies; epitaxial layers; lattice parameter; low dislocation density; synchrotron X-ray source; Epitaxial layers; Gallium arsenide; Indium; Lattices; Materials science and technology; Optical reflection; Strain measurement; Substrates; Synchrotrons; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location
Berkeley, CA
Print_ISBN
0-7803-4354-9
Type
conf
DOI
10.1109/SIM.1998.785104
Filename
785104
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