Title :
Development of AlGaN DUV-LED
Author :
Ippommatsu, Masamichi ; Hirano, Akira ; Akasaki, I. ; Amano, Hideharu
Author_Institution :
UV Craftly Co., Ltd., Nagoya, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
We report on development for commercial production of 50mW class AlGaN based deep ultraviolet light-emitting diodes (DUVLED) with wave length ranging 255 to 355 nm. DUVLED have about 10% EQE and over 10000 hours life time.
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; light emitting diodes; wide band gap semiconductors; 50mW class AlGaN based deep ultraviolet light-emitting diodes; AlGaN; DUVLED; EQE; external quantum efficiency; power 50 mW; wavelength 255 nm to 355 nm; Aluminum gallium nitride; Cooling; Educational institutions; Light emitting diodes; Production; Resins;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6599921
