Title :
Electrical properties of SiGe layers grown by LPE and CVD
Author :
Krüger, Olaf ; Seifert, Winfried ; Kittler, Martin ; Gutjahr, Astrid ; Silier, Inge ; Konuma, Mitsuharu ; Said, Khalid ; Caymax, Matty ; Poortmans, Jef
Author_Institution :
Inst. for Semicond. Phys., Frankfurt, Germany
Abstract :
In this paper we present electrical properties of a few microns thick, relaxed SiGe layers for solar cell application. The layers were characterized by means of electron beam induced current (EBIC), X-ray microanalysis (EDX), backscattered electrons, and Hall effect analysis
Keywords :
CVD coatings; EBIC; Ge-Si alloys; Hall effect; X-ray chemical analysis; electron backscattering; semiconductor epitaxial layers; semiconductor materials; semiconductor thin films; CVD; EBIC; EDX; Hall effect; LPE; SiC; SiGe layers; X-ray microanalysis; backscattered electrons; electrical properties; electron beam induced current; relaxed SiGe layers; solar cell application; Buffer layers; Electron beams; Epitaxial growth; Germanium silicon alloys; Lattices; Photovoltaic cells; Plasma temperature; Silicon germanium; Substrates; Surface morphology;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785105
