Title :
Recent progress of green laser diodes
Author_Institution :
Semicond. Technol. R&D Labs., Sumitomo Electr. Ind., Ltd., Itami, Japan
fDate :
June 30 2013-July 4 2013
Abstract :
Output powers of over 100mW and wall plug efficiencies as high as 8.9% in the wavelength range of 525-532 nm were demonstrated in InGaN based laser diodes on semipolar {202̅1} GaN substrates.
Keywords :
III-V semiconductors; gallium compounds; indium compounds; quantum well lasers; GaN; InGaN; InGaN based laser diodes; efficiency 8.9 percent; green laser diodes; output powers; semipolar {202̅1} GaN substrates; wall plug efficiency; wavelength 525 nm to 532 nm; Conferences; Electrooptical waveguides; Lasers and electrooptics;
Conference_Titel :
Lasers and Electro-Optics Pacific Rim (CLEO-PR), 2013 Conference on
Conference_Location :
Kyoto
DOI :
10.1109/CLEOPR.2013.6599922
