Title :
InAs/In0.52Al0.48As quantum wire structure with the specific layer-ordering orientation on InP(001)
Author :
Wu, J. ; Xu, B. ; Li, H.X. ; Mo, Q.W. ; Wang, Z.G. ; Zhao, X.M. ; Wu, D.
Author_Institution :
Inst. of Semicond., Acad. Sinica, Beijing, China
Abstract :
Quantum wires were formed in the 6-period InAs/In0.52Al 0.48As structure on InP (001) grown by molecular beam epitaxy. The structure was characterized with transmission electron microscopy. It was found that the lateral periodic compositional modulation in the QWR array was in the [11¯0] direction and layer-ordered along the specific orientation deviating [001] by about 30 degrees. This deviating angle is consistent with the calculation of the distribution of elastic distortion around quantum wires in the structure using the finite element technique
Keywords :
III-V semiconductors; aluminium compounds; elastic deformation; finite element analysis; indium compounds; interface structure; semiconductor quantum wires; semiconductor superlattices; transmission electron microscopy; 6-period InAs/In0.52Al0.48As structure; InAs-In0.52Al0.48As; InAs/In0.52Al0.48As quantum wire structure; InP; InP(001); QWR array; deviating angle; elastic distortion; finite element technique; lateral periodic compositional modulation; molecular beam epitaxy; specific layer-ordering orientation; transmission electron microscopy; Capacitive sensors; Finite element methods; Indium phosphide; Laboratories; Molecular beam epitaxial growth; Quantum dots; Quantum well devices; Semiconductor materials; Transmission electron microscopy; Wire;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785107
