Title :
GaAs and SiC quantum wire arrays: fabrication and characterisation
Author :
Samuilov, V.A. ; Bashmakov, I.A. ; Butylina, I.B. ; Grigorieva, I.M. ; Ksenevich, V.K. ; Solovjova, L.V.
Author_Institution :
Belarus State Univ., Minsk, Russia
Abstract :
We report a novel approach for fabrication of mesoscopic ordered arrays (networks) based on self-organized patterning in complex liquids (nitrocellulose solution). In order to prepare semiconductor quantum wire arrays the networks are used as masks for further reactive-ion-beam etching of GaAs surface or as a precursors for synthesis of SiC on the surface of Si. Auger electron spectroscopy carbon peaks of converted networks exhibit a fine structure typical for SiC
Keywords :
Auger electron spectra; III-V semiconductors; arrays; gallium arsenide; masks; mesoscopic systems; self-assembly; semiconductor quantum wires; silicon compounds; sputter etching; wide band gap semiconductors; Auger electron spectroscopy; GaAs; GaAs surface; Si; SiC; complex liquids; fabrication; masks; mesoscopic ordered arrays; nitrocellulose solution; quantum wire arrays; reactive-ion-beam etching; self-organized patterning; semiconductor quantum wire arrays; Epitaxial growth; Fabrication; Gallium arsenide; Liquids; Network synthesis; Quantum dots; Scanning electron microscopy; Silicon carbide; Spectroscopy; Wire;
Conference_Titel :
Semiconducting and Insulating Materials, 1998. (SIMC-X) Proceedings of the 10th Conference on
Conference_Location :
Berkeley, CA
Print_ISBN :
0-7803-4354-9
DOI :
10.1109/SIM.1998.785108